2025
IEEE ANDREW S. GROVE AWARD
Sponsored by the IEEE Electron Devices Society
“For pioneering contributions to physics of ferroelectrics and integrated ferroelectric devices.”
Sayeef Salahuddin’s groundbreaking work on ferroelectric “negative capacitance” (NC) technology has revolutionized integration of ferroelectrics into CMOS technology. Starting from his 2008 invention of the NC technology, Salahuddin led meticulous experiments to establish the enhanced capacitance that can be achieved, and also advance NC towards manufacturing viability, demonstrating its effectiveness in various applications such as transistors, DRAM capacitors and capacitive energy storage. In 2017, he established the Berkeley Center of Negative Capacitance Technology to facilitate knowledge transfer to industry leaders. This work has inspired widespread adoption of ferroelectric materials in CMOS production by major manufacturers and sparked extensive research.
An IEEE Fellow, Salahuddin is the Taiwan Semiconductor Manufacturing Company Distinguished Professor, Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, California, USA.