IEEE Nick Holonyak, Jr. Medal for Semiconductor Optoelectronic Technologies

Presented to

May be awarded to an individual or to a team of up to three.


For outstanding contributions to semiconductor optoelectronic devices and systems including high-energy-efficiency semiconductor devices and electronics.


The award consists of a gold medal, a bronze replica, a certificate, and honorarium.

Basis for Judging

Impact on the profession and/or society, succession of significant technical or other contributions, leadership in accomplishing worthwhile goal(s), previous honors, and other achievements as evidenced by publications or patents or other evidence.

This medal recognizes specific areas of optoelectronic technology as they are becoming more important including, for example, the development of photonic integrated circuits (PICs), high-efficiency vertical-cavity surface-emitting laser diodes (VCSELs), ultraviolet laser diodes and LEDs, high-density three-dimensional integrated circuits, high-power electronic devices and circuits, high-efficiency solar cells, nanopatterned LEDs for displays, flexible electronics, biocompatible electronics, energy harvesting electronic devices, organic semiconductor materials and devices, and nanostructure semiconductor devices as well as new applications for optoelectronic devices such as lidar, self-driving cars, high-speed “6G” silicon-related photonics, laser machining, laser space and underwater communications, global space-based mm-wave internet access from satellites, as well as the energy savings for reduction of global warming.